Random-access memory
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"RAM" redirects here. For the Daft Punk album, see Random Access Memories. For other uses, see Ram (disambiguation).
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| Non-volatile |
| ROM |
| NVRAM |
| Early stage NVRAM |
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Example of writable volatile random-access memory: Synchronous Dynamic RAM modules, primarily used as main memory in personal computers, workstations, and servers.
RAM contains multiplexing and demultiplexing circuitry, to connect the data lines to the addressed storage for reading or writing the entry. Usually more than one bit of storage is accessed by the same address, and RAM devices often have multiple data lines and are said to be '8-bit' or '16-bit' etc. devices.
In today's technology, random-access memory takes the form of integrated circuits. RAM is normally associated with volatile types of memory (such as DRAM memory modules), where stored information is lost if power is removed, although non-volatile RAM has also been developed.[1] Other types of non-volatile memories exist that allow random access for read operations, but either do not allow write operations or have other kinds of limitations on them. These include most types of ROM and a type of flash memory called NOR-Flash.
Integrated-circuit RAM chips came into the market in the early 1970s, with the first commercially available DRAM chip, the Intel 1103, introduced in October 1970.[2]
Contents
History
These IBM tabulating machines from the 1930s used mechanical counters to store information
A portion of a core memory with a modern flash SD card on top
1 Megabit chip – one of the last models developed by VEB Carl Zeiss Jena in 1989
The first practical form of random-access memory was the Williams tube starting in 1947. It stored data as electrically charged spots on the face of a cathode ray tube. Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access. The capacity of the Williams tube was a few hundred to around a thousand bits, but it was much smaller, faster, and more power-efficient than using individual vacuum tube latches. Developed at the University of Manchester in England, the Williams tube provided the medium on which the first electronically stored-memory program was implemented in the Manchester Small-Scale Experimental Machine (SSEM) computer, which first successfully ran a program on 21 June 1948.[4] In fact, rather than the Williams tube memory being designed for the SSEM, the SSEM was a testbed to demonstrate the reliability of the memory.[5][6]
Magnetic-core memory was invented in 1947 and developed up until the mid-1970s. It became a widespread form of random-access memory, relying on an array of magnetized rings. By changing the sense of each ring's magnetization, data could be stored with one bit stored per ring. Since every ring had a combination of address wires to select and read or write it, access to any memory location in any sequence was possible.
Magnetic core memory was the standard form of memory system until displaced by solid-state memory in integrated circuits, starting in the early 1970s. Robert H. Dennard invented dynamic random-access memory (DRAM) in 1968; this allowed replacement of a 4 or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility. Data was stored in the tiny capacitance of each transistor, and had to be periodically refreshed every few milliseconds before the charge could leak away.
Prior to the development of integrated read-only memory (ROM) circuits, permanent (or read-only) random-access memory was often constructed using diode matrices driven by address decoders, or specially wound core rope memory planes.[citation needed]
Types of random-access memory
The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six transistor memory cell. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM. In modern computers, SRAM is often used as cache memory for the CPU. DRAM stores a bit of data using a transistor and capacitor pair, which together comprise a DRAM memory cell. The capacitor holds a high or low charge (1 or 0, respectively), and the transistor acts as a switch that lets the control circuitry on the chip read the capacitor's state of charge or change it. As this form of memory is less expensive to produce than static RAM, it is the predominant form of computer memory used in modern computers.Both static and dynamic RAM are considered volatile, as their state is lost or reset when power is removed from the system. By contrast, read-only memory (ROM) stores data by permanently enabling or disabling selected transistors, such that the memory cannot be altered. Writeable variants of ROM (such as EEPROM and flash memory) share properties of both ROM and RAM, enabling data to persist without power and to be updated without requiring special equipment. These persistent forms of semiconductor ROM include USB flash drives, memory cards for cameras and portable devices, etc. ECC memory (which can be either SRAM or DRAM) includes special circuitry to detect and/or correct random faults (memory errors) in the stored data, using parity bits or error correction code.
In general, the term RAM refers solely to solid-state memory devices (either DRAM or SRAM), and more specifically the main memory in most computers. In optical storage, the term DVD-RAM is somewhat of a misnomer since, unlike CD-RW or DVD-RW it does not need to be erased before reuse. Nevertheless, a DVD-RAM behaves much like a hard disc drive if somewhat slower.
Memory cell
Main article: Memory cell (binary)
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit
of binary information and it must be set to store a logic 1 (high
voltage level) and reset to store a logic 0 (low voltage level). Its
value is maintained/stored until it is changed by the set/reset process.
The value in the memory cell can be accessed by reading it.In SRAM, the memory cell is a type of flip-flop circuit, usually implemented using FETs. This means that SRAM requires very low power when not being accessed, but it is expensive and has low storage density.
A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a '1' or a '0' in the cell. However, this capacitor will slowly leak away, and must be refreshed periodically. Because of this refresh process, DRAM uses more power, but it can achieve greater storage densities and lower unit costs compared to SRAM.
DRAM Cell (1 Transistor and one capacitor)
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SRAM Cell (6 Transistors)
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Addressing
To be useful, memory cells must be readable and writeable. Within the RAM device, multiplexing and demultiplexing circuitry is used to select memory cells. Typically, a RAM device has a set of address lines A0... An, and for each combination of bits that may be applied to these lines, a set of memory cells are activated. Due to this addressing, RAM devices virtually always have a memory capacity that is a power of two.Usually several memory cells share the same address. For example, a 4 bit 'wide' RAM chip has 4 memory cells for each address. Often the width of the memory and that of the microprocessor are different, for a 32 bit microprocessor, eight 4 bit RAM chips would be needed.
Often more addresses are needed than can be provided by a device. In that case, external multiplexors to the device are used to activate the correct device that is being accessed.
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